High-performance short-channel self-aligned top-gate InSnZnO TFTs with a stacked Al2O3/SiO2 gate dielectric: Elucidating the enhancement mechanisms

• Realization of 1 µm short-channel SATG ITZO TFTs with Al 2 O 3 /SiO 2 stacked GI. • Outstanding electrical performance with suppressed short-channel effects. • Al 2 O 3 /SiO 2 GI passivates interface defects and enhances GI bonding network integrity. • Defect passivation mechanism elucidated via ToF-SIMS and XPS analyses. • Findings guide scaling of SATG oxide TFTs for future semiconductor engineering. Virtual and augmented reality and other next-generation displays require ultrahigh-resolutio