All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths

Nature Communications, Published online: 19 June 2026; doi:10.1038/s41467-026-74555-2 The simultaneous downscaling of the channel length (Lch) and contact length (Lc) remains an important challenge towards the industrialization of 2D transistors. Here, the authors report the realization of high-performance vertical metal–semiconductor field-effect transistors based on 2D MoS2 channels with sub-10 nm Lch and Lc.